Description
- Technology: DDR3 SO-DIMM
- Density: 4GB (4096MB)
- RoHS: Yes
- Comp. Count: 8
- Depth: 512Mb
- Width: x64
- Pin Count: 204-pin
- Op. Temp.: 0C to +85C
- Data Rate: DDR3-1333
- Speed: PC3-10600
- CL: CAS 9-9-9-24
- Cycle Time: 1.875ns
- Voltage: 1.5V
- Comp. Config: 512Mb x 8
- ECC: Non ECC
- Module Ranks: Dual Rank
- Register: Non Parity
- Low Noise 8-Layer PCB
- Meets and/or Exceeds Apple/Intel Specifications
- Fully Compliant with JEDEC specifications
- RoHS Certified
Reviews
There are no reviews yet.